Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC

Takashi Goto, Hisashi Homma, Toshio Hirai

研究成果: Article査読

36 被引用数 (Scopus)

抄録

The oxidation behavior of chemically vapor-deposited silicon carbide (CVD SiC) was studied at 1670-2010 K in O2-Ar and CO2-Ar. The oxidation kinetics in O2-Ar was parabolic or linear parabolic, and was parabolic in C02-Ar. The activation energy for the parabolic rate constants (kp) was 210-220 kJ/mol in O2-Ar, and was 290-300 kJ/mol in CO2-Ar. The oxygen partial pressure (PO2) dependence of kp was expressed as kp α (PO2)n, where n = 0.08-0.13 and 0.37-0.53 in O2-Ar and CO2-Ar, respectively. Bubbles were formed at more than 1985 K and PO2 > 5 kPa. The bubble formation temperature decreased with decreasing PO2 at PO2 < 5 kPa.

本文言語English
ページ(範囲)359-370
ページ数12
ジャーナルCorrosion Science
44
2
DOI
出版ステータスPublished - 2002 2月
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 化学工学(全般)
  • 材料科学(全般)

フィンガープリント

「Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル