Effect of organic buffer layer on performance of pentacene field-effect transistor fabricated on natural mica gate dielectric

Akira Matsumoto, Ryo Onori, Susumu Ikeda, Koichiro Saiki, Keiji Ueno

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The mobility of pentacene-based organic field-effect transistors (OFETs) fabricated on natural mica substrates has been highly improved using poly (methyl methacrylate) (PMMA) or octadecyltrimethoxysillane (OTMS) as a buffer layer between the mica dielectric and the pentacene active layer. The field-effect mobility increased from 2.4 × 10-3 to 0.14 or 0.31 cm2·V-1·s-1 by inserting the PMMA or OTMS buffer layer, respectively. The suppression of the unfavorable effect of potassium ions using the OTMS buffer layer confirmed the feasibility of using natural mica as a transparent gate dielectric of OFETs.

本文言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
46
36-40
DOI
出版ステータスPublished - 2007 10月 12
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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