Effect of nitrogen doping into SiO2 studied by photoemission spectroscopy

S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, N. Hirashita

研究成果: Article査読

20 被引用数 (Scopus)

抄録

The photoemission spectroscopy was used to analyze the effect of nitrogen doping into silica (SiO2). The photoemission spectroscopy using synchrotron radiations was performed on ultrathin Si oxynitride films to study the change of energy-band structure by nitrogen doping. The difference in nitrogen doping and two valance-band maxima was revealed by the valance-band spectra obtained by substracting the contribution of the Si substrate. The results show that the size of the Si3N4 phase was enlarged by increasing the nitrogen concentration.

本文言語English
ページ(範囲)5449-5451
ページ数3
ジャーナルApplied Physics Letters
83
26
DOI
出版ステータスPublished - 2003 12 29
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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