The photoemission spectroscopy was used to analyze the effect of nitrogen doping into silica (SiO2). The photoemission spectroscopy using synchrotron radiations was performed on ultrathin Si oxynitride films to study the change of energy-band structure by nitrogen doping. The difference in nitrogen doping and two valance-band maxima was revealed by the valance-band spectra obtained by substracting the contribution of the Si substrate. The results show that the size of the Si3N4 phase was enlarged by increasing the nitrogen concentration.
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