Effect of nitrogen bonding states on dipole at the HfSiO/SiON interface studied by photoemission spectroscopy

S. Toyoda, H. Kamada, A. Kikuchi, H. Kumigashira, M. Oshima, K. Iwamoto, T. Sukegawa, Z. Liu

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We have investigated effect of nitrogen bonding states on dipole at the HfSiO/SiON interface using photoemission spectroscopy with synchrotron radiation. Significant increase in the valence-band discontinuity between HfSiO films on a Si substrate upon annealing is observed, which can be related to changes in the interface dipole. Chemical states and in-depth profiles analyses suggest diffusion of nitrogen atoms from the HfSiO/SiON interface to the substrate during annealing processes. It is found that the formation of the interface dipole strongly depends on the nitrogen bonding states and their distributions at the HfSiO/SiON interface.

本文言語English
論文番号124103
ジャーナルJournal of Applied Physics
107
12
DOI
出版ステータスPublished - 2010 6 15
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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