Effect of nitridation on indium-composition of InGaN films

Jung Hun Choi, Suresh Kumar, Shi Yang Ji, Shojiki Kanako, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The present study aims to understand the relation between the nitridation and indium-composition of InGaN grown on sapphire substrate using the metalorganic vapor phase epitaxy through X-ray diffraction reciprocal space mapping measurements. In-composition of InGaN on nitrided sapphire substrate increased to 13% which is higher than the sample without nitridation with 7%. Also, flat surface was observed in the nitrided sample. Two times larger in-plane strain was induced at the nitired sample. InGaN grown on low-temperature GaN buffer, however, did not show clear effect of nitridation. The two investigated samples showed similar Indium composition, surface flatness, and in-plane strain with and without nitridation. Differences of indium incorporation and relaxation of in-plane strain were attributed to the effect of AIN formed by nitridation process.

本文言語English
ホスト出版物のタイトルMaterials Integration
出版社Trans Tech Publications Ltd
ページ193-198
ページ数6
ISBN(印刷版)9783037853764
DOI
出版ステータスPublished - 2012
イベントInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 - Sendai, Japan
継続期間: 2011 12 12011 12 2

出版物シリーズ

名前Key Engineering Materials
508
ISSN(印刷版)1013-9826
ISSN(電子版)1662-9795

Other

OtherInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
国/地域Japan
CitySendai
Period11/12/111/12/2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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