Effect of n incorporation on growth behavior of InGaAsN/GaAs/Ge multi-layered structure by MOVPE

Pornsiri Wanarattikan, Sakuntam Sanorpim, Somyod Denchitcharoen, Kenjiro Uesugi, Takehiko Kikuchi, Shigeyuki Kuboya, Kentaro Onabe

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We have investigated an effect of N incorporation on InGaAsN on Ge (001), which is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell, and on its growth behavior. Results obtained from high resolution X-ray diffraction and Raman scattering demonstrated that high quality In0.11Ga0.89As1-yNy films with N (y) contents up to 5% were successfully grown on n-type doped Ge (001) substrate by metalorganic vapor phase epitaxy using low-temperature (500°C) GaAs buffer layer. As expectation, the In0.11Ga0.89As0.96N0.04 film is examined to be under lattice-matching condition. Anti-phase domains were observed for the film without N incorporation, which exhibits submicron-size domains oriented along the [110] direction on the grown surface. With increasing N content, the domains become less orientation, and present in a larger domain size. Based on results of transmission electron microscopy, a high density of anti-phase domains was clearly observed at the interface of low-temperature GaAs buffer layer and Ge substrate. On the other hand, it is found to drastically reduce within the N-contained InGaAsN region. Furthermore, the lattice-matched In0.11Ga0.89As0.96N0.04 film is well developed to reduce the density of anti-phase domains.

本文言語English
ホスト出版物のタイトルAdvances in Material Science and Technology
ページ129-133
ページ数5
DOI
出版ステータスPublished - 2013
イベントInternational Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013 - Bangkok, Thailand
継続期間: 2013 8 212013 8 24

出版物シリーズ

名前Advanced Materials Research
802
ISSN(印刷版)1022-6680

Other

OtherInternational Conference on Engineering, Applied Sciences, and Technology, ICEAST 2013
CountryThailand
CityBangkok
Period13/8/2113/8/24

ASJC Scopus subject areas

  • Engineering(all)

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