Effect of ion attachment on mechanical dissipation of a resonator

Takahito Ono, Masayoshi Esashi

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The influence of adsorbates on the surface-related mechanical dissipation of a silicon resonator was investigated. Different ion species were attached on a silicon resonator with a native oxide, and the quality factor (Q factor) and resonant frequency changes were observed by in situ measurement. It was found that water ion attachment creates OH terminations and results in a similar Q factor to that after exposure to the atmosphere. Nitrogen ions created very active sites for surface mechanical dissipation. In contrast, exposure to hydrogen ions increased the Q factor by a factor of 2. Hydrogen ions caused the dissipation sites on the surface to become inactive or less active for surface-related mechanical dissipation.

本文言語English
論文番号044105
ジャーナルApplied Physics Letters
87
4
DOI
出版ステータスPublished - 2005 7月 25

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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