Effect of iodotrifluoromethane plasma for reducing ultraviolet light irradiation damage in dielectric film etching processes

Yoshinari Ichihashi, Yasushi Ishikawa, Ryu Shimizu, Seiji Samukawa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

Iodotrifluoromethane (CF3 I) gas is one of the environmentally conscious perfluorocarbon gases because it has a very low global warming potential. The authors have found that CF3 I gas plasma drastically reduces ultraviolet (UV) photon irradiation of ∼4.0 eV, which corresponds to the excitation energy at silicon dioxide (SiO2) /silicon (Si) interfaces, in comparison with octafluorocyclobutane (C4 F 8) gas. This results in reducing UV irradiation damage in dielectric film etching processes, which was experimentally confirmed by evaluating charge-pumping currents in metal insulator semiconductor field effect transistors fabricated by using CF3 I gas etching. They have also demonstrated that a novel etching method using pulse-time modulation of CF 3 I gas plasma for the first time further reduced UV light irradiation damage.

本文言語English
ページ(範囲)577-580
ページ数4
ジャーナルJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
28
3
DOI
出版ステータスPublished - 2010 5月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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