Effect of Interstitial Mg in Mg2+xSi on Electrical Conductivity and Seebeck Coefficient

M. Kubouchi, Y. Ogawa, K. Hayashi, T. Takamatsu, Y. Miyazaki

研究成果: Article査読

15 被引用数 (Scopus)

抄録

The crystal structure, thermoelectric properties, and microstructure of polycrystalline samples with nominal compositions Mg2+xSi (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) have been investigated. It is revealed that the Mg2+xSi samples were composites consisting of Mg2Si matrix with dispersed Mg metal. The Mg2Si crystals contained a small amount of Mg atoms at interstitial (1/2 1/2 1/2) site (Mgi). In addition, Mg metal was present at grain boundaries between Mg2Si crystal grains (MgGB). Regarding thermoelectric properties, the electrical conductivity and Seebeck coefficient of Mg2+xSi were measured and their x dependences were discussed in terms of the amounts of Mgi and MgGB. The amount of MgGB and the electrical conductivity indicate quite similar x dependences.

本文言語English
ページ(範囲)1589-1593
ページ数5
ジャーナルJournal of Electronic Materials
45
3
DOI
出版ステータスPublished - 2016 3月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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