Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

K. Nakai, K. Hamada, Y. Satoh, T. Yoshiie

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

本文言語English
ページ(範囲)421-436
ページ数16
ジャーナルPhilosophical Magazine
91
3
DOI
出版ステータスPublished - 2011 1

ASJC Scopus subject areas

  • 凝縮系物理学

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