Effect of growth interruption on the structural and optical properties of (100) InAs/InAlAs/InP nanostructures

B. H. Koo, C. G. Lee, J. H. Chang, T. Hanada, H. Makino, T. Yao, Y. G. Park, D. Shindo

研究成果: Article

抜粋

The effect of growth interruption (GI) on the structural and optical properties of InAs nanostructures was investigated by transmission electron microscopy (TEM) and photoluminescence (PL). By introducing the GI, a single PL peak changed to a distinctive multiple-peak feature with average full width at half maximum ≈30 meV, which shows the state filling of the several low energy peaks. In conjunction with the TEM results, the changes in the PL spectra due to GI are most probably correlated with the formation of different-height islands isolated from neighbor islands due to a 2D-3D transition of the InAs layer during the GI.

元の言語English
ページ(範囲)S681-S684
ジャーナルJournal of the Korean Physical Society
45
発行部数SUPPL.
出版物ステータスPublished - 2004 12 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Koo, B. H., Lee, C. G., Chang, J. H., Hanada, T., Makino, H., Yao, T., Park, Y. G., & Shindo, D. (2004). Effect of growth interruption on the structural and optical properties of (100) InAs/InAlAs/InP nanostructures. Journal of the Korean Physical Society, 45(SUPPL.), S681-S684.