Effect of Ge/Si heterostructures on carrier extraction in Si solar cells with Ge quantum dots

Takeshi Tayagaki, Yusuke Hoshi, Kazufumi Ooi, Takanori Kiguchi, Noritaka Usami

研究成果: Conference contribution

抄録

Solar cells using quantum dots (QDs) have been extensively studied, in many of which the open circuit voltage (Voc) always decreases. The mechanism of this Voc reduction has not been understood well. We studied Si solar cells with multi-stacked Ge QDs (Ge/Si QD solar cells), in which the type-II Ge/Si band offsets are formed. From the current-voltage characteristics, the Voc is found to increase at low temperatures, indicating that the Voc reduction is due to thermal excitation of carriers. By comparing solar cells with different Ge thicknesses, we found that the Voc reduction depends strongly on the Ge thickness.

本文言語English
ホスト出版物のタイトル39th IEEE Photovoltaic Specialists Conference, PVSC 2013
出版社Institute of Electrical and Electronics Engineers Inc.
ページ330-332
ページ数3
ISBN(印刷版)9781479932993
DOI
出版ステータスPublished - 2013 1 1
イベント39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
継続期間: 2013 6 162013 6 21

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
国/地域United States
CityTampa, FL
Period13/6/1613/6/21

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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