Effect of Ge addition on postannealed CoCrGePt thin film media

H. Domon, D. D. Djayaprawira, M. Takahashi, T. Endo, S. Furukawa

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The effect of Ge addition to postannealed CoCrGe and CoCrGePt thin film media with CrMn overlayer is discussed. It is found that the postannealing at about 410°C drastically reduces intergranular exchange interaction and increases coercivity of the media, which is probably due to the diffusion of nonmagnetic elements to the grain boundary in the magnetic layer. It is clarified that Ge addition increases the anisotropy field of postannealed CoCrGe or CoCrGePt media, which agrees well with the previous results obtained in CoCrGe bulk polycrystalline alloy. In particular, the anisotropy field of postannealed CoCr 5 media is increased by 70% with 10 at.% Ge addition. The increase of coercivity is mainly due to the increase of anisotropy field. It is confirmed that Ge addition to CoCr-based media can increase H c and H k grain significantly, in case where the grains of the magnetic layer can be magnetically isolated.

本文言語English
ページ(範囲)8632-8634
ページ数3
ジャーナルJournal of Applied Physics
91
10 I
DOI
出版ステータスPublished - 2002 5月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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