Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy

S. S. Han, A. Higo, W. Yunpeng, M. Deura, M. Sugiyama, Y. Nakano, S. Panyakeow, S. Ratanathammaphan

研究成果: Article査読

1 被引用数 (Scopus)

抄録

A comparison of ultra-thin insertion layers (GaP and GaP/In 0.4Ga0.6P) on InP self-assembled quantum dots (SAQDs) grown on GaAs (0 0 1) substrates using metal-organic vapor phase epitaxy (MOVPE) was studied. Atomic force microscopy (AFM) and photoluminescence (PL) were employed to characterize the optical and structural properties of the grown InP QDs. It is found that the QD dimension, size distribution and density strongly depend on the insertion layer thickness which led to tune the emission wavelength and narrowing of full width at half maximum (FWHM) at low temperature (20-250 K) and at room-temperature PL measurements. This result is attributed to the improved QD size and quantum confinement effect arising from the insertion of the GaP and GaP/In0.4Ga0.6P layers.

本文言語English
ページ(範囲)143-148
ページ数6
ジャーナルMicroelectronic Engineering
112
DOI
出版ステータスPublished - 2013

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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