Effect of forced convection by crucible design in solution growth of SiC single crystal

Kazuhisa Kurashige, Masahiro Aoshima, Koichi Takei, Kuniharu Fujii, Masahiko Hiratani, Nachimuthu Senguttuvan, Tomohisa Kato, Toru Ujihara, Yuji Matsumoto, Hajime Okumura

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

In this paper, we will discuss how to cope with the smoother growth front and higher growth rate by the forced convection. When the rotation rate of the upper part of the solution is different from that of the lower part in the crucible, the centrifugal force of the upper part is different from that of the lower part. As a result, a forced convection occurs in the solution. This kind of convection was achieved with accelerating/decelerating rotation of crucible and a plate fixed on the bottom of the crucible. By optimizing conditions of rotation program patterns and the crucible design for the forced convection, the growth rate could almost be doubled while maintaining smooth morphology.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2014
編集者Didier Chaussende, Gabriel Ferro
出版社Trans Tech Publications Ltd
ページ22-25
ページ数4
ISBN(印刷版)9783038354789
DOI
出版ステータスPublished - 2015 1 1
イベントEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
継続期間: 2014 9 212014 9 25

出版物シリーズ

名前Materials Science Forum
821-823
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

フィンガープリント 「Effect of forced convection by crucible design in solution growth of SiC single crystal」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル