Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate high-electron-mobility transistors on sapphire substrates

Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu, Naoteru Shigekawa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The DC and RF characteristics of short-gate high-electron-mobility transistors (HEMTs) formed on four AlGaN/GaN wafers grown on sapphire substrates with different crystal quality have been investigated. Atomic force microscopy observation revealed many pits and trenches on the AlGaN surface, and the morphology of each sample was distinct. There were also differences in electron mobility and sheet carrier concentration. However, the gate length dependences of the measured transconductance and cut-off frequency were virtually the same. For a more detailed investigation, we subtracted the source resistance and AlGaN thickness contributions from measured DC and performed a delay time analysis for the RF characteristics. The results indicate that the intrinsic performance of HEMTs was independent of the surface morphology and that effective electron velocity ranged from 1.4 to 1.8 × 107 cm/s.

本文言語English
ページ(範囲)8435-8440
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
44
12
DOI
出版ステータスPublished - 2005 12月 8
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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