Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis of MOSFETs with Various Gate Shapes

R. Akimoto, R. Kuroda, A. Teramoto, T. Mawaki, S. Ichino, T. Suwa, S. Sugawa

研究成果: Conference contribution

抄録

In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shaped gates, and characteristics of random telegraph noise (RTN), such as amplitude and time constants under various drain-to-source voltage (VDS) conditions were extracted and analyzed. It was found that RTN is dominated by traps at the minimum gate width in the channel formed under each of the operating bias conditions, and traps at the source side are most influential under a large VDS. The trap location along the source-drain direction is estimated by the VDS dependencies of RTN characteristics.

本文言語English
ホスト出版物のタイトル2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728131993
DOI
出版ステータスPublished - 2020 4
イベント2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
継続期間: 2020 4 282020 5 30

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
2020-April
ISSN(印刷版)1541-7026

Conference

Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
CountryUnited States
CityVirtual, Online
Period20/4/2820/5/30

ASJC Scopus subject areas

  • Engineering(all)

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