Effect of dissolved oxygen on etching process of Si(111) in 2.5% NH3 solution

Hirokazu Fukidome, Michio Matsumura

研究成果: Article

21 引用 (Scopus)

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Etching processes of Si(111) in 2.5% NH3 solution (pH 12) were examined with attention to the effect of oxygen dissolved in the solution. Atomic force microscopy observation showed that many etch pits were formed on the surface in the solution containing dissolved oxygen at high concentrations. In contrast, the surface was atomically flattened by removing dissolved oxygen from the solution. Infrared absorption spectroscopy revealed that the surface was hydrogen-terminated after treatment with the solutions with and without dissolved oxygen, and that dissolved oxygen degraded the homogeneity of the surface. It was also found that dissolved oxygen lowered the etching rate of Si(111) in the solution.

元の言語English
ページ(範囲)L649-L653
ジャーナルSurface Science
463
発行部数3
DOI
出版物ステータスPublished - 2000 9 10

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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