Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire

Hironobu Tanigawa, Katsumi Suemitsu, Shunsuke Fukami, Norikazu Ohshima, Tetsuhiro Suzuki, Eiji Kariyada, Nobuyuki Ishiwata

研究成果: Article

20 引用 (Scopus)

抜粋

This paper describes experimental results obtained from measuring the dependence of device temperature on the current for domain wall motion in a Co/Ni wire having perpendicular magnetic anisotropy. Devices with different insulating layer thicknesses were prepared in order to control the device temperature. A stable domain wall motion was observed up to the temperature at which perpendicular magnetic anisotropy vanishes. Moreover, the current required for domain wall motion was independent of the device temperature.

元の言語English
記事番号013007
ジャーナルApplied Physics Express
4
発行部数1
DOI
出版物ステータスPublished - 2011 1 1
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Tanigawa, H., Suemitsu, K., Fukami, S., Ohshima, N., Suzuki, T., Kariyada, E., & Ishiwata, N. (2011). Effect of device temperature on domain wall motion in a perpendicularly magnetized Co/Ni wire. Applied Physics Express, 4(1), [013007]. https://doi.org/10.1143/APEX.4.013007