@inproceedings{813b16c5493d492ab008b16ac834a53c,
title = "Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure",
abstract = "The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA. copyright The Electrochemical Society.",
author = "H. Nohira and T. Matsuda and K. Tachi and Y. Shiino and J. Song and Y. Kuroki and Ng, {Jin Aun} and P. Ahmet and K. Kakushima and K. Tsutsui and E. Ikenaga and K. Kobayashi and H. Iwai and T. Hattori",
year = "2006",
doi = "10.1149/1.2356276",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "169--173",
booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 2",
edition = "2",
note = "Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}