β-SiC films were prepared by laser chemical vapour deposition using a Nd:YAG laser in a H2 or Ar atmosphere. The effects of the deposition atmosphere on the film phase composition and microstructure were investigated. In a H2 atmosphere, (111)-oriented β-SiC films consisting of submicron-sized grains were grown at 1273-1473 K, while carbon was codeposited with the β-SiC films grown at 1573-1673 K. In an Ar atmosphere, amorphous Si-C-O films were grown at 1073-1373 K, while (111)-oriented β-SiC films that did not contain free carbon were grown at 1473-1723 K. The deposition rates of the (111)-oriented β-SiC films were 1500-2000 μm h-1.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry