Effect of deposition atmosphere on the phase composition and microstructure of silicon carbide films prepared by laser chemical vapour deposition

Ryuma Hashimoto, Akihiko Ito, Takashi Goto

研究成果: Article

12 引用 (Scopus)

抜粋

β-SiC films were prepared by laser chemical vapour deposition using a Nd:YAG laser in a H2 or Ar atmosphere. The effects of the deposition atmosphere on the film phase composition and microstructure were investigated. In a H2 atmosphere, (111)-oriented β-SiC films consisting of submicron-sized grains were grown at 1273-1473 K, while carbon was codeposited with the β-SiC films grown at 1573-1673 K. In an Ar atmosphere, amorphous Si-C-O films were grown at 1073-1373 K, while (111)-oriented β-SiC films that did not contain free carbon were grown at 1473-1723 K. The deposition rates of the (111)-oriented β-SiC films were 1500-2000 μm h-1.

元の言語English
ページ(範囲)6898-6904
ページ数7
ジャーナルCeramics International
41
発行部数5
DOI
出版物ステータスPublished - 2015 6 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

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