Effect of delamination at chip/encapsulant interface on chip stress and transistor characteristics

Hideo Miura, Tetsuo Kumazawa, Asao Nishimura

研究成果: Paper査読

18 被引用数 (Scopus)

抄録

The change process of the amplifier gain of bipolar transistors encapsulated in small outline J-leaded packages (SOJ-type packages) during temperature cycling test is discussed. The amplifier gain changes almost linearly with the applied uni-axial stress. The residual stress of the LSI chip is found to change during the temperature cycling test by applying stress-sensing test chips. It is found by applying a finite element analysis and ultrasonic inspection that the stress change is due to delamination at interface between the LSI chip and the encapsulant resin. The predicted amplifier gain change due to this delamination agrees well with the measured result.

本文言語English
ページ73-78
ページ数6
出版ステータスPublished - 1995 12月 1
外部発表はい
イベントProceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition - San Francisco, CA, USA
継続期間: 1995 11月 121995 11月 17

Other

OtherProceedings of the 1995 ASME International Mechanical Engineering Congress and Exposition
CitySan Francisco, CA, USA
Period95/11/1295/11/17

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 機械工学

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