Effect of Defects on the Grain and Grain Boundary Strength in Polycrystalline Copper Thin Films

Ken Suzuki, Fan Yiqing, Yifan Luo, Hideo Miura

研究成果: Conference contribution

抄録

In this study, grain boundary quality in terms of order of atomic arrangement of electroplated copper thin films was evaluated by using the IQ (Image Quality) value obtained from an electron back-scatter diffraction (EBSD) method, and the grain and grain boundary strength was evaluated by applying micro tensile test. In addition, in order to investigate the relationship between the strength and grain boundary quality, molecular dynamics (MD) simulations were applied to analyze the deformation behavior of a bicrystal sample and its strength. The variation of the strength and deformation property were attributed to the higher defect density around grain boundaries than that in grains, which impeded the development of slip systems.

本文言語English
ホスト出版物のタイトルSISPAD 2018 - 2018 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ88-91
ページ数4
ISBN(電子版)9781538667880
DOI
出版ステータスPublished - 2018 11 28
イベント2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018 - Austin, United States
継続期間: 2018 9 242018 9 26

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2018-September

Other

Other2018 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2018
CountryUnited States
CityAustin
Period18/9/2418/9/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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