Effect of crystal orientation on residual stress and electrical properties of a PZT thin film deposited on buffered-Si substrate

Keisuke Fujito, Naoki Wakiya, Takanori Kiguchi, Nobuyasu Mizutani, Kazuo Shinozaki

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Changes of residual stress and electrical properties were examined in (001)-oriented and (111)-oriented Pb(Zr0.5Ti0.5)O 3 (PZT) thin films deposited on a buffered-Si substrate with a buffer and bottom electrode layer of a (La,Sr)CoO3(LSCO). A (001)-epitaxial PZT film was prepared on LSCO/CeO2 /Zr0.85Y 0.15O1.93(YSZ)/Si. In addition, a (111)-oriented PZT film was prepared on LSCO/SrTiO3(ST) /Mn0.24Zn 0.09Fe2.67O4(MZF)/YSZ/Si. The residual tensile stress in (001)-PZT thin films decreased from 2.92 to 1.98 GPa and the remanent polarization increased from 7.5 to 41.7 μC/cm2 as the LSCO thickness increased. In (111)-PZT, the residual tensile stress decreased from 1.72 to 0.95 GPa and remanent polarization increased from 9.5 to 26.7 μC/cm2. The residual tensile stress of (111)-PZT was less than that of (001)-PZT. The remanent polarization in the 80 nm (111)-PZT was greater than that of the 60 nm (001)-PZT. In the 700-nm-thick PZT, the remanent polarization in (001)-PZT was greater than that in (111)-PZT.

本文言語English
ページ(範囲)65-68
ページ数4
ジャーナルKey Engineering Materials
320
DOI
出版ステータスPublished - 2006 1 1
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ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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