Effect of concurrent irradiation with electrons on ion-induced amorphization in silicon

Abe Hiroaki, Kinoshita Chiken, Paul R. Okamoto, Lynn E. Rehn

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The effect of concurrent irradiation with electrons on ion-induced amorphization has been investigated under irradiation with high energy ions and fast electrons in the HVEM-TANDEM Facility at Argonne National Laboratory. The simultaneous irradiation with a focused electron beam prevents or retards the ion-induced amorphization, forming a distinct interface between crystalline and amorphous regions. The position of the interface has been converted to the critical electron flux, which increases with increasing energy deposition density and flux of ions and energy of electrons. It is concluded that amorphous embryos are essentially formed through overlap of subcascades, and that the prevention of ion-induced amorphization is mainly caused by athermal migration of point defects.

本文言語English
ページ(範囲)298-302
ページ数5
ジャーナルJournal of Nuclear Materials
212-215
PART 1
DOI
出版ステータスPublished - 1994 9月

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 材料科学(全般)
  • 原子力エネルギーおよび原子力工学

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