Effect of composition rate on erbium silicide work function on different silicon surface orientation

Hiroaki Tanaka, Akinobu Teramoto, Tsukasa Motoya, Shigetoshi Sugawa, Tadahiro Ohmi

研究成果: Conference contribution

抄録

Electrical and physical properties of ErSix on n-type Si(100) (111) and (551) surfaces are reported. The ErSix density affects the work function of ErSix. A controlling the composition ratio of Er and Si is a key parameter for a reducing contact resistance for high performance MISFETs. These silicidation reactions are very important to develop the high current drivability devices using any surface orientation.

本文言語English
ホスト出版物のタイトルGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
ページ343-350
ページ数8
1
DOI
出版ステータスPublished - 2013
イベント5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
継続期間: 2013 5 122013 5 17

出版物シリーズ

名前ECS Transactions
番号1
53
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period13/5/1213/5/17

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント 「Effect of composition rate on erbium silicide work function on different silicon surface orientation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル