Effect of barrier width on the performance of quantum well infrared photodetector

Steven K.H. Sim, H. C. Liu, A. Shen, M. Gao, Kevin F. Lee, M. Buchanan, Y. Ohno, H. Ohno, E. H. Li

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We present a study on a set of AlGaAs/GaAs quantum well infrared photodetectors with various barrier widths from about 100 to 500 Å. At 77 K and for a large field-of-view (FOV) 300-K background operation, measured results on dark current, responsivity, and detectivity indicate that detectors with barrier widths larger than about 200 Å have similar performance. For 60-70 K and F/2 FOV, barriers need to be larger than about 300 Å to suppress inter-well tunneling.

本文言語English
ページ(範囲)115-121
ページ数7
ジャーナルInfrared Physics and Technology
42
3-5
DOI
出版ステータスPublished - 2001 6月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学

フィンガープリント

「Effect of barrier width on the performance of quantum well infrared photodetector」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル