Effect of anion-to-cation supplying ratio on the surface morphology of AlN films grown on ZnO substrates at low temperature

Inho Im, Mina Jung, Jieun Koo, Hyunjae Lee, Jinsub Park, Tsutomu Minegishi, Seunghwan Park, Katsushi Fujii, Takafumi Yao, Gyungsuk Kil, Takashi Hanada, Jiho Chang

研究成果: Article査読

抄録

The authors investigated the evolution of surface morphology of AlN films grown on ZnO substrates at low temperature (LT) (400 °C) as a function of anion/cation supplying ratio (V/III ratio). Unlike the well-known favorable growth conditions for high-temperature growth, smooth-surface LT-AlN layers were obtained under the O-polar surface, stoichiometric, and N-rich conditions. LT-AlN layers revealed smooth surface (roughness in root mean square=0.20 nm for AlN on O-polar ZnO and 0.44 nm for AlN on Zn-polar ZnO) and quite low etch-pit density (∼2× 106 cm-2 for AlN/Zn -polar ZnO).

本文言語English
ページ(範囲)61-64
ページ数4
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
28
1
DOI
出版ステータスPublished - 2010

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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