Effect of ALD-Al2O3 Passivated Silicon Quantum Dot Superlattices on p/i/n+ Solar Cells

Mohammad Maksudur Rahman, Yi Chia Tsai, Ming Yi Lee, Akio Higo, Yiming Li, Yusuke Hoshi, Noritaka Usami, Seiji Samukawa

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The photovoltaic (PV) nature of the silicon (Si) quantum dot super lattice (QDSL) is studied with an atomiclayer-deposited aluminum oxide film (ALD-Al2O3) and a conventional sputtered-grown amorphous silicon carbide film (a-SiC). The QDSL structures act as an intermediate layer in a p/i/n+ Si solar cell. The QDSL consists of 4-nm Si on 2-nm SiC nanodisks (NDs) arrayed in an ALD-Al2O3 and a-SiC passivation matrix. Formation of Si-NDs was confirmed by bright field scanning transmission electron microscope. A significant PV response in generating a high photocurrent density Jsc of 30.15mA/cm2open circuit voltage Voc of 0.50 V, fill factor FF of 0.61, and efficiency η of 9.12% was observed in ALD-Al2O3/QDSL solar cell with respect to a-SiC/QDSL solar cell with Jsc of 26.94 mA/cm2, Voc of 0.50 V, FF of 0.47, and ? of 6.42%. A wide range of photo-carrier transports by the ALD-Al2O3/QDSL structure is possible in the external quantum efficiency spectra with respect to a-SiC/QDSL solar cell. The enhanced PV performance of the QD solar cells was clarified in terms of simulating the absorption contributions for all possible transitions in the nanostructure with different passivation films.

本文言語English
論文番号7935526
ページ(範囲)2886-2892
ページ数7
ジャーナルIEEE Transactions on Electron Devices
64
7
DOI
出版ステータスPublished - 2017 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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