Effect of a radiation shield on silicon cz growth

Takao Tsukada, Nobuyuki Imaishi, Mitsunori Hozawa, Katsuhiko Fujinawa

研究成果: Article査読

9 被引用数 (Scopus)

抄録

For silicon CZ crystal growth, the effect of inserting a radiation shield into the furnace on the temperature profile in the melt and crystal and on the shape of the melt/crystal interface was studied theoretically by use of finite element analysis based on the conduction-dominated model. It was found that inserting a radiation shield makes the interface shape less convex to the crystal in comparison with that without the shield except for the initial stage. Also, with use of a short radiation shield there is a possibility of obtaining a higher pull rate because the temperature gradient near the interface becomes steeper than that without the shield.

本文言語English
ページ(範囲)146-151
ページ数6
ジャーナルJOURNAL of CHEMICAL ENGINEERING of JAPAN
20
2
DOI
出版ステータスPublished - 1987

ASJC Scopus subject areas

  • 化学 (全般)
  • 化学工学(全般)

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