Dynamically stabilized growth of polar oxides: The case of MgO(111)

Vlado K. Lazarov, Zhuhua Cai, Kenta Yoshida, K. Honglian L. Zhang, M. Weinert, Katherine S. Ziemer, Philip J. Hasnip

研究成果: Article査読

27 被引用数 (Scopus)

抄録

By using MgO(111) as a model system for polar oxide film growth, we show by first-principles calculations that H acts as a surfactant, i.e., the H changes its position and bonding during the growth process, remaining in the surface region. Continuous presence of H during the growth of MgO(111) film efficiently removes the microscopic dipole moment, thus enabling the growth of perfect fcc-ordered MgO(111) films. These theoretical predictions are confirmed experimentally by molecular beam epitaxy single crystal growth of MgO(111) on SiC(0001).

本文言語English
論文番号056101
ジャーナルPhysical review letters
107
5
DOI
出版ステータスPublished - 2011 7 28
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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