Dynamic photoluminescence change of porous Si upon exposure to thermoelectrons/D atoms and D2O

T. Wadayama, T. Arigane, K. Hayamizu, T. Shibahara, D. Hino, A. Hatta

研究成果: Article査読

6 被引用数 (Scopus)

抄録

In situ photoluminescence (PL) and transmission IR spectral measurements have been carried out for porous Si (PS) after exposure to thermoelectrons and subsequent exposure to D atoms or D2O. Upon exposure to thermoelectrons the PL band (765 nm) of the PS almost diminished accompanied by the intensity reduction of the IR bands due to Si-Hx (x= 1-3) species. A subsequent D atom exposure resulted in a recovery of the PL band with the formation of Si-Dx bonds. In contrast, D2O exposure gave rise to a new PL band at 650 nm in addition to a 745 nm band accompanied by the emergence of IR bands due to Si-OD and Si-D bonds: the integrated PL intensity after the D2O exposure is 1.2 times larger than the PL intensity of the as-anodized PS. These results suggest that the PL of the PS contains an important contribution from the surface Si-O bonds.

本文言語English
ページ(範囲)1851-1853
ページ数3
ジャーナルApplied Physics Letters
76
14
DOI
出版ステータスPublished - 2000 4 3

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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