Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga,Mn)As/n-GaAs spin Esaki diode

J. Shiogai, M. Ciorga, M. Utz, D. Schuh, T. Arakawa, M. Kohda, K. Kobayashi, T. Ono, W. Wegscheider, D. Weiss, J. Nitta

研究成果: Article査読

22 被引用数 (Scopus)

抄録

We investigate the dynamic nuclear spin polarization in an n-GaAs lateral channel induced by electrical spin injection from a (Ga,Mn)As/n-GaAs spin Esaki diode. Signatures of nuclear spin polarization are studied in both three-terminal and non-local voltage signals, where a strong electron spin depolarization feature is observed close to zero magnetic field. This is due to the large nuclear field induced in the channel through hyperfine interaction between injected electron spins and localized nuclear spins. We study the time evolution of the dynamic nuclear spin polarization and evaluate polarization and relaxation times of nuclear spins in the channel.

本文言語English
論文番号212402
ジャーナルApplied Physics Letters
101
21
DOI
出版ステータスPublished - 2012 11 19

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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