Dynamic model of epitaxial growth in ternary III-V semiconductor alloys

Bing Lin Gu, Zhi Feng Huang, Jun Ni, Jing Zhi Yu, Kaoru Ohno, Yoshiyuki Kawazoe

研究成果: Article査読

11 被引用数 (Scopus)

抄録

A concentration-wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deep layers of ternary III-V alloys. The most stable ordered structures of ternary III-V semiconductor alloys are deduced and a dynamic model for epitaxial growth is proposed. The present results are compared with the experimental observations, and the relations between interaction parameters are also given.

本文言語English
ページ(範囲)7104-7111
ページ数8
ジャーナルPhysical Review B
51
11
DOI
出版ステータスPublished - 1995

ASJC Scopus subject areas

  • 凝縮系物理学

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