抄録
A concentration-wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deep layers of ternary III-V alloys. The most stable ordered structures of ternary III-V semiconductor alloys are deduced and a dynamic model for epitaxial growth is proposed. The present results are compared with the experimental observations, and the relations between interaction parameters are also given.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 7104-7111 |
| ページ数 | 8 |
| ジャーナル | Physical Review B |
| 巻 | 51 |
| 号 | 11 |
| DOI | |
| 出版ステータス | Published - 1995 |
ASJC Scopus subject areas
- 凝縮系物理学