A novel dynamic L-I characteristics measurement is proposed for analyzing intermodulation distortion in LDs. The dynamic L-I characteristics show a good correlation with the intermodulation distortion characteristics compared with the static L-I characteristics and enabled to analyze the distortion mechanism in the LDs caused by relaxation oscillation and an RF leakage current.
|ジャーナル||Conference Digest - IEEE International Semiconductor Laser Conference|
|出版ステータス||Published - 1996 12 1|
|イベント||Proceedings of the 1996 15th IEEE International Semiconductor Laser Conference, ISLC - Haifa, Isr|
継続期間: 1996 10 13 → 1996 10 18
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering