Dynamic injection MNOS memory devices

Ryuji Kondo, Yuji Yatsuda, Mitsumasa Koyanagi, Yokichi Itoh

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Dynamic Injection MNOS (DIMNOS) memory devices are proposed which feature high speed writing, 5 V drain voltage and a dynamic RAM with MNOS backup. These devices have one or two control gates and one MNOS memory between the control gates and field SiO2layer. In the above structures, the inversion layer under the MNOS gate is filled with charges transferred from the source through the control gates while writing voltage is being applied to MNOS gate. Then, the control gates are electrically closed and the stored charge in the inversion layer is injected into the interface between the thin SiO2and Si3N4layers in the MNOS. In the experimental results, N-channel Si-gate DIMNOS memory devices are written as fully as conventional MNOS memories in less than 50 nanoseconds. Furthermore, in the dynamic inhibited writing mode, writing is indeed inhibited with pulse widths shorter than 1.0 msec if the number of inhibited writing attempts is kept to less than 103by writing pulse shape improvement.

本文言語English
ページ(範囲)231-237
ページ数7
ジャーナルJapanese journal of applied physics
19
DOI
出版ステータスPublished - 1980 1月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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