Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks

Maxim Ryzhii; Taiichi Otsuji; Victor Ryzhii; Vladimir Mitin; Michael S. Shur; Georgy Fedorov; Vladimir Leiman

doi:10.1142/S0129156417400043

Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks

Maxim Ryzhii, Taiichi Otsuji, Victor Ryzhii, Vladimir Mitin, Michael S. Shur, Georgy Fedorov, Vladimir Leiman

電気通信研究所・ブロードバンド工学研究部門

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

We study theoretically the carrier transport and the plasmonic phenomena in the gated structures with dense lateral carbon nanotube (CNT) networks (CNT "felt") placed between the highly-conducting slot line electrodes. The CNT networks under consideration consist of a mixture of semiconducting and metallic CNTs. We find the dispersion relations for the two-dimensional plasmons, associated with the collective self-consisted motion of electrons in the individual CNTs, propagating along the electrodes as functions of the net electron density (gate voltage), relative fraction of the semiconducting and metallic CNTs, and the spacing between the electrodes. In a wide range of parameters, the characteristic plasmonic frequencies can fall in the terahertz (THz) range. The structures with lateral CNT networks can used in different THz devices.

本文言語	English
論文番号	1740004
ジャーナル	International Journal of High Speed Electronics and Systems
巻	26
号	1-2
DOI	https://doi.org/10.1142/S0129156417400043
出版ステータス	Published - 2017 6 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

文献へのアクセス

10.1142/S0129156417400043

フィンガープリント「Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

@article{a76ef1080f994935b33e27a93165b6f5,

title = "Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks",

abstract = "We study theoretically the carrier transport and the plasmonic phenomena in the gated structures with dense lateral carbon nanotube (CNT) networks (CNT {"}felt{"}) placed between the highly-conducting slot line electrodes. The CNT networks under consideration consist of a mixture of semiconducting and metallic CNTs. We find the dispersion relations for the two-dimensional plasmons, associated with the collective self-consisted motion of electrons in the individual CNTs, propagating along the electrodes as functions of the net electron density (gate voltage), relative fraction of the semiconducting and metallic CNTs, and the spacing between the electrodes. In a wide range of parameters, the characteristic plasmonic frequencies can fall in the terahertz (THz) range. The structures with lateral CNT networks can used in different THz devices.",

keywords = "carbon nanotube network, plasmonic, terahertz radiation, two-dimensional carrier system",

author = "Maxim Ryzhii and Taiichi Otsuji and Victor Ryzhii and Vladimir Mitin and Shur, {Michael S.} and Georgy Fedorov and Vladimir Leiman",

year = "2017",

month = jun,

day = "1",

doi = "10.1142/S0129156417400043",

language = "English",

volume = "26",

journal = "International Journal of High Speed Electronics and Systems",

issn = "0129-1564",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "1-2",

}

TY - JOUR

T1 - Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks

AU - Ryzhii, Maxim

AU - Otsuji, Taiichi

AU - Ryzhii, Victor

AU - Mitin, Vladimir

AU - Shur, Michael S.

AU - Fedorov, Georgy

AU - Leiman, Vladimir

PY - 2017/6/1

Y1 - 2017/6/1

N2 - We study theoretically the carrier transport and the plasmonic phenomena in the gated structures with dense lateral carbon nanotube (CNT) networks (CNT "felt") placed between the highly-conducting slot line electrodes. The CNT networks under consideration consist of a mixture of semiconducting and metallic CNTs. We find the dispersion relations for the two-dimensional plasmons, associated with the collective self-consisted motion of electrons in the individual CNTs, propagating along the electrodes as functions of the net electron density (gate voltage), relative fraction of the semiconducting and metallic CNTs, and the spacing between the electrodes. In a wide range of parameters, the characteristic plasmonic frequencies can fall in the terahertz (THz) range. The structures with lateral CNT networks can used in different THz devices.

AB - We study theoretically the carrier transport and the plasmonic phenomena in the gated structures with dense lateral carbon nanotube (CNT) networks (CNT "felt") placed between the highly-conducting slot line electrodes. The CNT networks under consideration consist of a mixture of semiconducting and metallic CNTs. We find the dispersion relations for the two-dimensional plasmons, associated with the collective self-consisted motion of electrons in the individual CNTs, propagating along the electrodes as functions of the net electron density (gate voltage), relative fraction of the semiconducting and metallic CNTs, and the spacing between the electrodes. In a wide range of parameters, the characteristic plasmonic frequencies can fall in the terahertz (THz) range. The structures with lateral CNT networks can used in different THz devices.

KW - carbon nanotube network

KW - plasmonic

KW - terahertz radiation

KW - two-dimensional carrier system

UR - http://www.scopus.com/inward/record.url?scp=85013276246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013276246&partnerID=8YFLogxK

U2 - 10.1142/S0129156417400043

DO - 10.1142/S0129156417400043

M3 - Article

AN - SCOPUS:85013276246

VL - 26

JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

SN - 0129-1564

IS - 1-2

M1 - 1740004

ER -