Dual work function phase controlled Ni-FUSI CMOS (NiSi NMOS, Ni 2Si or Ni31Si12 PMOS): Manufacturability, reliability & process window improvement by sacrificial SiGe cap

A. Veloso, T. Hoffmann, A. Lauwers, S. Brus, J. F. De Marneffe, S. Locorotondo, C. Vrancken, T. Kauerauf, A. Shickova, B. Sijmus, H. Tigelaar, M. A. Pawlak, H. Y. Yu, C. Demeurisse, S. Kubicek, C. Kerner, T. Chiarella, O. Richard, H. Bender, Masaaki NiwaP. Absil, M. Jurczak, S. Biesemans, J. A. Kittl

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

This work presents the first comprehensive evaluation of the manufacturability and reliability of dual WF phase controlled Ni-FUSI/HfSiON CMOS (NMOS: NiSi; PMOS: Ni2Si and Ni31Si12 evaluated) for the 45 nm node. RTP and poly/spacer height were identified as the most critical process control parameters in our flow. We demonstrate that a novel sacrificial SiGe cap addition to the flow (improved poly-Si/spacer height control) opens the RTP1 process window from ∼5°C to ∼20°C for gate lengths down to 45nm, making scalable dual WF CMOS Ni-FUSI manufacturaba. We demonstrate Vt control with σ∼19mV (including wafer to wafer variation, N=1000, 45 nm devices) for NMOS (NiSi), and σ∼21mV for PMOS. TDDB and NBTI reliability evaluation of NiSi and, for the first time, of Ni2Si and Ni31Si12 was done. ∼1V or larger operating voltages (Vop) were extrapolated for a 10 years lifetime. Using a higher backend thermal budget showed no reliability degradation.

本文言語English
ホスト出版物のタイトル2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
ページ94-95
ページ数2
出版ステータスPublished - 2006 12 1
外部発表はい
イベント2006 Symposium on VLSI Technology, VLSIT - Honolulu, HI, United States
継続期間: 2006 6 132006 6 15

Other

Other2006 Symposium on VLSI Technology, VLSIT
CountryUnited States
CityHonolulu, HI
Period06/6/1306/6/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

フィンガープリント 「Dual work function phase controlled Ni-FUSI CMOS (NiSi NMOS, Ni <sub>2</sub>Si or Ni<sub>31</sub>Si<sub>12</sub> PMOS): Manufacturability, reliability & process window improvement by sacrificial SiGe cap」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル