Dual Raman features of double coaxial carbon nanotubes with N-doped and B-doped multiwalls

Quan Hong Yang; Peng Xiang Hou; Masashi Unno; Seigo Yamauchi; Riichiro Saito; Takashi Kyotani

doi:10.1021/nl051779j

Dual Raman features of double coaxial carbon nanotubes with N-doped and B-doped multiwalls

Quan Hong Yang, Peng Xiang Hou, Masashi Unno, Seigo Yamauchi, Riichiro Saito, Takashi Kyotani

理学研究科・物理学専攻

研究成果: Article › 査読

209 被引用数 (Scopus)

抄録

Double coaxial carbon nanotubes with nitrogen (N)-doped and boron (B) -doped multiwalls possess composite Raman characteristics, originating not only from the outer N-doped but also from inner B-doped layers. Both N and B dopings result in substantial shifts of the characteristic D band and G band of sp ² carbon constituting nanotube walls but In different ways. The downshift of the G band is correlated with the decreases of electrical resistivity of carbon nanotubes regardless of N or B doping.

本文言語	English
ページ（範囲）	2465-2469
ページ数	5
ジャーナル	Nano Letters
巻	5
号	12
DOI	https://doi.org/10.1021/nl051779j
出版ステータス	Published - 2005 12月 1

ASJC Scopus subject areas

バイオエンジニアリング
化学 (全般)
材料科学（全般）
凝縮系物理学
機械工学

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AU - Saito, Riichiro

AU - Kyotani, Takashi

PY - 2005/12/1

Y1 - 2005/12/1

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AB - Double coaxial carbon nanotubes with nitrogen (N)-doped and boron (B) -doped multiwalls possess composite Raman characteristics, originating not only from the outer N-doped but also from inner B-doped layers. Both N and B dopings result in substantial shifts of the characteristic D band and G band of sp 2 carbon constituting nanotube walls but In different ways. The downshift of the G band is correlated with the decreases of electrical resistivity of carbon nanotubes regardless of N or B doping.

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Dual Raman features of double coaxial carbon nanotubes with N-doped and B-doped multiwalls

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