Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, T. Hanyu

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We demonstrate an SOT-MRAM, a nonvolatile memory using spin-orbit-torque (SOT) devices that have a read-disturbance-free characteristic. The SOT-MRAM fabricated by a 55-nm CMOS process achieves 60-MHz write and 90-MHz read operations with 1.2-V supply voltage under a magnetic-field-free condition. The SOT-MRAM is also implemented in a dual-port configuration utilizing three-terminal structure of the device, which realizes a wide bandwidth applicable to high-speed applications.

本文言語English
ホスト出版物のタイトル2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728199429
DOI
出版ステータスPublished - 2020 6
イベント2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020 - Honolulu, United States
継続期間: 2020 6 162020 6 19

出版物シリーズ

名前IEEE Symposium on VLSI Circuits, Digest of Technical Papers
2020-June

Conference

Conference2020 IEEE Symposium on VLSI Circuits, VLSI Circuits 2020
国/地域United States
CityHonolulu
Period20/6/1620/6/19

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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