A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.
|ジャーナル||IEEE MTT-S International Microwave Symposium Digest|
|出版ステータス||Published - 2001 12 1|
|イベント||International Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States|
継続期間: 2001 5 20 → 2001 5 25
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