Dual bias feed SiGe HBT low noise linear amplifier

Eiji Taniguchi, Kenichi Maeda, Takayuki Ikushima, Keiichi Sadahiro, Kenji Itoh, Noriharu Suematsu, Tadashi Takagi

研究成果: Conference article査読

9 被引用数 (Scopus)

抄録

A 2GHz-band SiGe HBT low noise amplifier (LNA) achieving high saturation power and low distortion performance is described. It has a novel diode/resistor dual bias feed circuit for the base of the HBT to extend its P1dB. In small signal region, the conventional resistor feed circuit is a dominant base current source, but in large signal region, the diode turns on and the diode feed circuit can supply base current like a voltage source which allows higher output power and linearity. The fabricated dual feed type LNA shows the P1dB improvement of 5dB compared with the conventional resistor feed LNA.

本文言語English
ページ(範囲)285-288
ページ数4
ジャーナルIEEE MTT-S International Microwave Symposium Digest
3
出版ステータスPublished - 2001 12 1
外部発表はい
イベントInternational Microwave Symposium Digest IEEE-MTT-S 2001 - Phoenix, AZ, United States
継続期間: 2001 5 202001 5 25

ASJC Scopus subject areas

  • 放射線
  • 凝縮系物理学
  • 電子工学および電気工学

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