Etch resistance of metal-free and halogen-substituted resist materials has been investigated under ion-beam etching (IBE) and oxygen reactive ion etching (RIE) conditions. Etch rate enhancement observed for halogen-substituted polymers is explained by the increase in the average molecular weight divided by the density of the polymer, M** OVER BAR /// rho . These results reveal that the rate determining step under ion bombardment is the sputtering of carbon atoms which are not bonded to oxygen atoms. Under O//2-RIE conditions, etch characteristics strongly depend on etching parameters. Etch rate cannot be explained simply by the sputtering of carbon atoms. Under anisotropic etching conditions, etch rate enhancement in halogenaten polystyrenes is qualitatively explained by the increase in M** OVER BAR /// rho . Under isotropic etching conditions, a drastic etch rate reduction was observed for iodinated polystyrene.
|専門出版物||Solid State Technology|
|出版ステータス||Published - 1985 5月 1|
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