DRY ETCH RESISTANCE OF METAL-FREE AND HALOGEN-SUBSTITUTED RESIST MATERIALS.

Hiroshi Gokan, Katsumi Tanigaki, Yoshitake Ohnishi

研究成果: Article

15 被引用数 (Scopus)

抄録

Etch resistance of metal-free and halogen-substituted resist materials has been investigated under ion-beam etching (IBE) and oxygen reactive ion etching (RIE) conditions. Etch rate enhancement observed for halogen-substituted polymers is explained by the increase in the average molecular weight divided by the density of the polymer, M** OVER BAR /// rho . These results reveal that the rate determining step under ion bombardment is the sputtering of carbon atoms which are not bonded to oxygen atoms. Under O//2-RIE conditions, etch characteristics strongly depend on etching parameters. Etch rate cannot be explained simply by the sputtering of carbon atoms. Under anisotropic etching conditions, etch rate enhancement in halogenaten polystyrenes is qualitatively explained by the increase in M** OVER BAR /// rho . Under isotropic etching conditions, a drastic etch rate reduction was observed for iodinated polystyrene.

本文言語English
ページ163-167
ページ数5
28
No.5
専門出版物Solid State Technology
出版ステータスPublished - 1985 5月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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