Dry Developable Multilayer Resist Using Direct Pattern Formation by Electron Beam-Induced Vapor-Phase Polymerization

Masao Morita, Saburo imamura, Toshiaki Tamamura, Osamu Kogure, Kei Murase

研究成果: Article査読

2 被引用数 (Scopus)

抄録

A new technique for high resolution lithography with a dry-developed multilayer resist system is demonstrated. The technique involves a direct pattern fabrication by electron beam-induced vapor-phase graft-polymerization. No wet process was included in the pattern fabrication. The use of a double-layer base film consisting of a thin silicone resin as a top layer and a thick AZ-1350J film as a bottom layer enabled the transfer of graft-polymerized polystyrene patterns on the silicone resin to thick resist with submicron-sized feature.

本文言語English
ページ(範囲)653-654
ページ数2
ジャーナルJournal of the Electrochemical Society
131
3
DOI
出版ステータスPublished - 1984 3月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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