Drastic reduction of dislocation density in semipolar (1122) GaN stripe crystal on Si substrate by dual selective metal-organic vapor phase epitaxy

Tasuku Murase, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano, Nobuhiko Sawaki

研究成果: Article

9 引用 (Scopus)

抜粋

A drastic reduction of the dislocation density in a semipolar (1122) GaN stripe on a patterned Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a SiO2 mask on the (1122) and (0001) faces of a GaN stripe grown on a (113) Si substrate, GaN was regrown only on the (1122) face. The dislocation density estimated from the dark-spot density in a cathodoluminescence (CL) image greatly decreased from 4.0 × 108 to 1.0 × 105/cm2 in the regrowth region. A transmission electron microscopy (TEM) image also verified that there were no dislocations at the regrowth interfaces.

元の言語English
記事番号01AD04
ジャーナルJapanese journal of applied physics
50
発行部数1 PART 2
DOI
出版物ステータスPublished - 2011 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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