We have studied the surface flatness properties of (111)A planes in both homoepitaxial growth of GaAs on GaAs and highly-mismatched heteroepitaxial growth of InAs and InSb on GaAs by molecular beam epitaxy. The homo-epitaxially grown GaAs (111)A surface has atomically flat terraces as wide as about 1 μm, which make it possible to clearly image the layer-by-layer growth processes of GaAs by in-situ scanning electron microscopy, in contrast with conventionally used (001) surfaces where the high density of steps prevents clear imaging. The surface flatness improvement using (111)A substrates is much more drastic in highly-mismatched hctcroepitaxy. The three-dimensional islanding governed by the Stranski-Rrastanov mechanism is strongly suppressed for the growth of both InAs and InSb on GaAs substrates. The lateral and vertical electron transport properties of Ga(A1)As/InAs/GaAs heterostructurcs are studied, verifying the improved electric properties by using the (111)A substrates. The application for novel hot-electron transistors is clearly demonstrated.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 1999 1 1|
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