Dramatic dependence of the Fermi level pinning strength on crystal orientation at clean surfaces of n-type In0.53Ga0.47As grown by molecular beam epitaxy

Simon Perraud, Kiyoshi Kanisawa, Zhao Zhong Wang, Yoshiro Hirayama

研究成果: Article査読

1 被引用数 (Scopus)

抄録

The electronic density of states at clean surfaces of n-type In0.53Ga0.47As, grown by molecular beam epitaxy on lattice-matched (0 0 1)- and (1 1 1)A-oriented InP substrates, was measured by low-temperature scanning tunneling spectroscopy under ultra-high vacuum. It was found that the surface Fermi level (FL) pinning strength dramatically depends on crystal orientation. The FL at the (0 0 1)-(2×4) surface is pinned near midgap, independently of the dopant concentration in the bulk. In contrast, the FL at the (1 1 1)A-(2×2) surface lies in the conduction band, close to the bulk FL, and increases with dopant concentration.

本文言語English
ページ(範囲)148-151
ページ数4
ジャーナルJournal of Crystal Growth
301-302
SPEC. ISS.
DOI
出版ステータスPublished - 2007 4月

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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