Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200°C

Hajime Ishii, Hiroaki Ueno, Tetsuzo Ueda, Tetsuo Endoh

研究成果: Article査読

抄録

In this paper, the current–voltage (I–V) characteristics of a 600-V-class normally off GaN gate injection transistor (GIT) from 25 to 200 °C are analyzed, and it is revealed that the drain current of the GIT increases during high-temperature operation. It is found that the maximum drain current (Idmax) of the GIT is 86% higher than that of a conventional 600-V-class normally off GaN metal insulator semiconductor hetero-FET (MIS-HFET) at 150 °C, whereas the GIT obtains 56% Idmax even at 200 °C. Moreover, the mechanism of the drain current increase of the GIT is clarified by examining the relationship between the temperature dependence of the I–V characteristics of the GIT and the gate hole injection effect determined from the shift of the second transconductance (gm) peak of the gm–Vg characteristic. From the above, the GIT is a promising device with enough drivability for future power switching applications even under high-temperature conditions.

本文言語English
論文番号06KC03
ジャーナルJapanese journal of applied physics
57
6
DOI
出版ステータスPublished - 2018 6

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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