Double resonance Raman modes in monolayer and few-layer MoTe2

Huaihong Guo, Teng Yang, Mahito Yamamoto, Lin Zhou, Ryo Ishikawa, Keiji Ueno, Kazuhito Tsukagoshi, Zhidong Zhang, Mildred S. Dresselhaus, Riichiro Saito

研究成果: Article

65 引用 (Scopus)

抜粋

We study the second-order Raman process of mono- and few-layer MoTe2, by combining ab initio density functional perturbation calculations with experimental Raman spectroscopy using 532, 633, and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the resonance Raman process occurs at the M point in the Brillouin zone, where a strong optical absorption occurs due to a logarithmic Van Hove singularity of the electronic density of states. The double resonance Raman process with intervalley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M-point phonons. The calculated vibrational frequencies of the second-order Raman spectra agree with the observed laser-energy-dependent Raman shifts in the experiment.

元の言語English
記事番号205415
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
91
発行部数20
DOI
出版物ステータスPublished - 2015 5 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Guo, H., Yang, T., Yamamoto, M., Zhou, L., Ishikawa, R., Ueno, K., Tsukagoshi, K., Zhang, Z., Dresselhaus, M. S., & Saito, R. (2015). Double resonance Raman modes in monolayer and few-layer MoTe2. Physical Review B - Condensed Matter and Materials Physics, 91(20), [205415]. https://doi.org/10.1103/PhysRevB.91.205415