Double LDD concave (DLC) structure for sub-half micron MOSFET

K. Sunouchi; H. Takato; Akihiro Nitayama; K. Hieda; F. Horiguchi; F. Masuoka

Double LDD concave (DLC) structure for sub-half micron MOSFET

K. Sunouchi, H. Takato, Akihiro Nitayama, K. Hieda, F. Horiguchi, F. Masuoka

国際集積エレクトロニクス研究開発センター

研究成果: Conference article › 査読

5 被引用数 (Scopus)

抄録

A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n⁺-n^--p^--p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1)high drain sustaining voltage, (2)a reduced short-channel effect, (3)high current drivability, and (4)high reliability. The high current drivability provides high-speed switching.

本文言語	English
ページ（範囲）	226-229
ページ数	4
ジャーナル	Technical Digest - International Electron Devices Meeting
出版ステータス	Published - 1988 12 1
イベント	Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA 継続期間: 1988 12 11 → 1988 12 14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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引用スタイル

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abstract = "A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1)high drain sustaining voltage, (2)a reduced short-channel effect, (3)high current drivability, and (4)high reliability. The high current drivability provides high-speed switching.",

author = "K. Sunouchi and H. Takato and Akihiro Nitayama and K. Hieda and F. Horiguchi and F. Masuoka",

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TY - JOUR

T1 - Double LDD concave (DLC) structure for sub-half micron MOSFET

AU - Sunouchi, K.

AU - Takato, H.

AU - Nitayama, Akihiro

AU - Hieda, K.

AU - Horiguchi, F.

AU - Masuoka, F.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1)high drain sustaining voltage, (2)a reduced short-channel effect, (3)high current drivability, and (4)high reliability. The high current drivability provides high-speed switching.

AB - A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1)high drain sustaining voltage, (2)a reduced short-channel effect, (3)high current drivability, and (4)high reliability. The high current drivability provides high-speed switching.

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M3 - Conference article

AN - SCOPUS:0024178923

SP - 226

EP - 229

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - Technical Digest - International Electron Devices Meeting 1988

Y2 - 11 December 1988 through 14 December 1988

ER -