Double LDD concave (DLC) structure for sub-half micron MOSFET

K. Sunouchi, H. Takato, Akihiro Nitayama, K. Hieda, F. Horiguchi, F. Masuoka

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

A novel concave-structure MOSFET named a double lightly doped drain concave (DLC) structure was developed for sub-half-micron MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n+-n--p--p along the side wall of the groove. It has been shown that the DLC MOSFET has excellent characteristics, such as (1)high drain sustaining voltage, (2)a reduced short-channel effect, (3)high current drivability, and (4)high reliability. The high current drivability provides high-speed switching.

本文言語English
ページ(範囲)226-229
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1988 12 1
イベントTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
継続期間: 1988 12 111988 12 14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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