Double injection in graphene p-i-n structures

V. Ryzhii, I. Semenikhin, M. Ryzhii, D. Svintsov, V. Vyurkov, A. Satou, T. Otsuji

研究成果: Article査読

31 被引用数 (Scopus)

抄録

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model, we calculate the band edge profile, the spatial distributions of the quasi-Fermi energies, carrier density and velocity, and the current-voltage characteristics. In particular, we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers.

本文言語English
論文番号244505
ジャーナルJournal of Applied Physics
113
24
DOI
出版ステータスPublished - 2013 6 28

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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